CVD Graphene on SiO2 1cmx1cmProduct Name Name: CVD Graphene on SiO2 1cmx1cm Product Overview The process of preparing graphene by CVD mainly includes three important influencing factors: substrate, precursor, and growth conditions. Among them, the substrate is an important condition for the growth of graphene. Currently, 8 10 transition metals (such as Fe, RuCoRhIrNiPdPtCuAu And alloys (such as Co Ni, Au Ni, Ni Mo, stainless steel). The mechanism of preparing graphene by CVD

and is widely used in modified polystyrene

it can be added to the polymer to make a film

and the space point group is P63/mmc

The main methods for preparing graphene oxide include oxidation method

and can be used in the manufacturing of electronic devices such as transistors

making them easy to modify and functionalize

Magnetic hyperthermia (MHT): Under the action of an external alternating magnetic field

High quality optical characteristics: low distortion optical transmission can be achieved

Adsorption and separation: Due to its large specific surface area and regular pore structure

polyaniline molecules self assemble into rod-shaped structures

such as quantum size effects

Anti-bacterial and anti-mould: It has good anti-bacterial effect